High performance InP high electron mobility transistors by valved phosphorus cracker

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1642-1644

  Chin, T P ^a   Chen, Y C ^a   Barsky, M ^a   Wojtowicz, M ^a   Grundbacher, R ^a   Lai, R ^a   Streit, D C ^a   Block, T R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHOSPHORUS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT); VALVED PHOSPHORUS CRACKERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034186990     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591443     Document Type: Article

References (5)

1. T. P. Chin, A. L. Gutierrez-Aitken, J. Cowles, E. N. Kaneshiro, A. C. Han, T. R. Block, A. K. Oki, and D. C. Streit, J. Vac. Sci. Technol. B 17, 1136 (1999).
2. T. Enoki, IEICE Trans. Electron. E76-C, 1402 (1993).
3. T. Enoki, IEEE Trans. Electron. Devices 42, 1413 (1995).
4. Y. C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. C. Yen, D. C. Streit, and A. Brown, 11th International Conference on Indium Phosphide and Related Materials, 16-20 May, 1999, Davos, Switzerland, Conference Proceeding, 1999 (unpublished), p. 305.
5. R. S. Sandhu, G. Bhasin, C. D. Moore, G. D. U'Ren, M. S. Goorsky, T. P. Chin, M. Wojtowicz, T. R. Block, and D. C. Streit, J. Vac. Sci. Technol. B 17, 1163 (1999).