InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption

Nanotechnology

Volumn 17, Issue 6, 2006, Pages 1713-1716

  Yao, H H ^a   Lu, T C ^a   Huang, G S ^a   Chen, C Y ^a   Liang, W D ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BLUE SHIFT; GROWTH INTERRUPTION; SAPPHIRE SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645654850     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/6/028     Document Type: Article

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