Effects of strain on the characteristics of InGaN-GaN multiple quantum-dot blue light emitting diodes

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 355, Issue 2, 2006, Pages 118-121

  Ji, Liang Wen ^a   Fang, Te Hua ^a   Meen, Teen Hang ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diodes (LEDs); Quantum dots (QDs); Raman

Indexed keywords

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; NANOCRYSTALS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS;

BACKSCATTERING GEOMETRY; BLUE LIGHT EMITTING DIODES; EFFECTS OF STRAINS; INJECTION CURRENTS; NITRIDE BASED LIGHT EMITTING DIODES; RAMAN; RAMAN MEASUREMENTS; SELF ASSEMBLED QUANTUM DOTS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 33646783311     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2006.02.023     Document Type: Article

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