InGaN quantum dots grown by MOVPE via a droplet epitaxy route

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 546-550

  Rice, J H ^a   Oliver, R A ^a   Robinson, J W ^a   Smith, J D ^a   Taylor, R A ^a   Briggs, G A D ^a   Kappers, M J ^b   Humphreys, C J ^b   Yasin, S ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

InGaN photoluminescence; MOVPE growth; Quantum dots

Indexed keywords

ANNEALING; CRYOSTATS; EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MOLECULAR NITROGEN; MOVPE GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642338390     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.074     Document Type: Conference Paper

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