An Inalas/Inas Modfet

IEEE Electron Device Letters

Volumn 12, Issue 12, 1991, Pages 707-709

  Eugster, Cristopher C ^a   Broekaert, Tom P E ^a   Del Alamo, Jesús A ^a   Fonstad, Clifton G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS--APPLICATIONS; MOLECULAR BEAM EPITAXY--APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS;

BREAKDOWN VOLTAGE; CHANNEL QUANTIZATION; EPITAXIAL HETEROSTRUCTURE; GATE-LENGTH DEVICES; MAXIMUM TRANSCONDUCTANCE; MODULATION DOPED FET (MODFET);

TRANSISTORS, FIELD EFFECT;

EID: 0026390022     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.116963     Document Type: Article

References (12)

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