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Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2615-2618

Phase noise study of AlGaN/GaN HEMT X-band oscillator

(7) Danylyuk, S V a Vitusevich, S A a Kaper, V b Tilak, V b Klein, N a Eastman, L F b Shealy, J R b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b School of Operations Research and Industrial Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE POLARIZATION; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; SPURIOUS SIGNAL NOISE;

DRAIN-SOURCE VOLTAGES; LOW-FREQUENCY NOISE SPECTRA; NOISE SPECTRAL DENSITY MEASUREMENTS;

OSCILLATORS (ELECTRONIC);

EID: 27344437060 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461457 Document Type: Conference Paper

Times cited : (8)

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