6-in diameter InP single crystals grown by the hot-wall LEC method and the mirror wafers

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 360-364

  Iwasaki, Koji ^a   Sato, Kouji ^a   Aoyama, Koichiro ^a   Numao, Shinji ^a   Honma, Itsuro ^a   Sugano, Susumu ^a   Hoshina, Takaharu ^a   Sato, Takayuki ^a  

^a Showa Denko Materials Co   (Japan)

Author keywords

Crystal growth; Dislocation density; Etch pit density (EPD); Flatness; Hot wall liquid encapsulated Czochralski (HW LEC) method; Indium phosphide (InP); Liquid encapsulated Czochralski (LEC) method; Local thickness variation (LTV); Resistivity; Single crystal; Single crystal wafer; Total thickness variation (TTV)

Indexed keywords

CHEMICAL POLISHING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; HEAT CONVECTION; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SINGLE CRYSTALS; SUBSTRATES; THERMAL GRADIENTS;

HOT-WALL LIQUID ENCAPSULATED CZOCHRALSKI METHOD; LOCAL THICKNESS VARIATION; TEMPERATURE GRADIENT; TOTAL THICKNESS VARIATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0041886415     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815626     Document Type: Article

References (6)

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2. R. Ware, "Manufacturing issues for large semi-insulating indium phosphide substrates," in Proc. 12th Int. Conf. Indium Phosphide and Related Materials, 2000, pp. 514-517.
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4. R. Ware, "Perspective for large semi-insulating indium phosphide substrate," in Proc. 13th Int. Conf. Indium Phosphide and Related Materials, 2001, pp. 212-215.
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6. SEMI standard, "Specification for round 150 mm polished monocrystalline gallium arsenide wafers (notched),", SEMI M9.7-0200.