Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 532-537

  Rudolph, P ^a   Kiessling, F M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Defects; A1. Impurities; A1. Point defects; A1. Stoichiometry; A2. Czochralski method; B2. GaAs

Indexed keywords

BORON COMPOUNDS; IMPURITIES; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; VAPORS;

DISLOCATION DENSITY; MELT COMPOSITION; RESIDUAL IMPURITIES; VAPOUR PRESSURE CONTROLLED CZOCHRALSKI (VCZ) METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 33745819963     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.066     Document Type: Article

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