LEC- and VGF-growth of SI GaAs single crystals - Recent developments and current issues

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 283-291

  Jurisch, M ^a   Borner F ^a   Bünger, Th ^a   Eichler, St ^a   Flade, T ^a   Kretzer, U ^a   Kohler A ^a   Stenzenberger, J ^a   Weinert, B ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

A1. Computer simulation; A1. Heat transfer; A1. Segregation; A2. Gradient freeze technique; A2. Liquid encapsulated Czochralski method; B2. Semi insulating gallium arsenide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; FREEZING; HEAT TRANSFER; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

CRYSTAL WAFERS; GRADIENT FREEZE TECHNIQUES; LIQUID ENCAPSULATED CZOCHRALSKI METHOD; SEMI-INSULATING GALLIUM ARSENIDE;

SILICON;

EID: 15844363470     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.092     Document Type: Conference Paper

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