GROWTH AND CHARACTERIZATION OF UNDOPED DISLOCATION FREE GaAs BY ARSENIC AMBIENT CONTROLLED LEC WITH THE AID OF X-RAY IMAGING SYSTEM.

Institute of Physics Conference Series

Volumn , Issue 79, 1986, Pages 25-30

  Ozawa, S ^a   Miyairi, H ^a   Nakajima, M ^a   Fukuda, T ^a  

^a Jpn ^*

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - DISLOCATIONS; X-RAYS - IMAGING TECHNIQUES;

CONTROLLED LEC; EUTECTIC ETCHING; LEC GROWTH; SINGLE CRYSTALS; SLIP BANDS; X-RAY SHADOW IMAGING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022983937     PISSN: 03730751     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)