Photoelastic characterization of residual stress in GaAs-wafers

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 345-350

  Geiler, H D ^a   Karge, H ^a   Wagner, M ^a   Eichler, St ^b   Jurisch, M ^b   Kretzer, U ^b   Scheffer Czygan, M ^b  

^a BioControl Jena GmbH   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

Defect monitoring; GaAs crystal; Nondestructive evaluation; Photoelasticity; Stress imaging

Indexed keywords

IMAGING TECHNIQUES; PHOTOELASTICITY; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM ARSENIDE; SHEAR STRESS;

DEFECT MONITORING; GAAS CRYSTAL; STRESS IMAGING;

SILICON WAFERS;

EID: 33744547047     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.076     Document Type: Article

References (14)

1. Fornari R. Mater. Sci. Eng. B9 (1991) 9-18
2. Jurisch M., Börner F., Bünger T., Eichler S., Flade T., Kretzer U., et al. J. Cryst. Growth 275 (2005) 283
3. Seidl A., Eichler S., Flade T., Jurisch M., Köhler A., Kretzer U., et al. J. Cryst. Growth 225 (2001) 561
4. Sumino K. Mechanical behaviour of semiconductors. In: Moss T.S., and Mahajan S. (Eds). Handbook of semiconductors vol.3 (1994), Elsevier, New York 101
5. Geiler H.D., Wagner M., Karge H., Paulsen M., and Schmolke R. Mat. Sci. Semicon. Proc. 5 (2003) 445-455
6. Geiler H.D., Karge H., Wagner M., Ehlert A., Daub E., and Messmann K. Mater. Sci. Eng. B91-92 (2002) 46
7. Matsui J. Appl. Surf. Sci. 50 (1991) 1-8
8. Yamada M. Rev. Sci. Instrum. 64 (1993) 1815-1821
9. Dally J.W., and Riley W.F. Experimental stress analysis (1991), McGraw-Hill, New York p.424
10. Yu F.T.S., and Khoo I.-C. Principles of Optical Engineering (1990), J.Wiley, New York p.98
11. Theocaris P.S., and Gdoutos E.E. Matrix theory of photoelasticity. Springer Series in Optical Science vol.11 (1979), Springer, Berlin p.34
12. Durelli A.J., and Riley W.F. Introduction to photomechanics (1965), Prentice-Hall Inc., Englewood Cliff p.66
13. Sokolnikoff I.S. Mathematical Theory of Elasticity (1956), Mc.Graw Hill, New York p.283
14. Bentini G., Correra L., and Donolato C. J. Appl. Phys. 56 (1984) 2922