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Volumn 213, Issue 1, 2000, Pages 10-18
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Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz)
a a a a b b |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
COMPUTER SOFTWARE;
CORRELATION METHODS;
CRYSTAL GROWTH FROM MELT;
CRYSTAL STRUCTURE;
INTERFACES (MATERIALS);
MATHEMATICAL MODELS;
SEMICONDUCTOR GROWTH;
STRESSES;
SURFACE STRUCTURE;
TEMPERATURE DISTRIBUTION;
VAPOR PRESSURE;
SOFTWARE PACKAGE STHAMAS;
VAPOR PRESSURE CONTROLLED CZOCHRALSKI METHOD;
VON MISES STRESS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033742744
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00208-6 Document Type: Article |
Times cited : (27)
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References (17)
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