Dislocation patterning during crystal growth of semiconductor compounds (GaAs)

Materials Science and Technology

Volumn 21, Issue 12, 2005, Pages 1450-1454

  Frank Rotschf, Ch ^a   Juda, U ^a   Kiessling, F M ^a   Rudolph, P ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Crystal growth; Dislocations and dislocation theory; GaAs; Modelling and simulation; Point defects; Single crystals

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DEFORMATION; DISLOCATIONS (CRYSTALS); POINT DEFECTS; SHEAR STRESS; SINGLE CRYSTALS; STOICHIOMETRY; VECTORS;

DISLOCATION PATTERNING; DISLOCATIONS AND DISLOCATION THEORY; MODELLING AND SIMULATION; TEMPERATURE FIELD SIMULATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 29444447523     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/174328405X71594     Document Type: Conference Paper

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