Fabrication and characteristics of low doped gallium-zinc oxide thin film transistor

Materials Research Society Symposium Proceedings

Volumn 963, Issue , 2006, Pages 222-227

  Verma, Ved Prakash ^a   Kim, Dohyun ^a   Jeon, Minhyon ^b   Choi, Wonbong ^a  

^a The Department of Electrical and Computer Engineering   (United States)

^b Inje University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC POTENTIAL; MAGNETRON SPUTTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ACTIVE CHANNEL; GA-DOPED ZINC OXIDE (GZO); ROOM TEMPERATURE; TURN-ON VOLTAGE;

THIN FILM TRANSISTORS;

EID: 40949130451     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0963-q12-01     Document Type: Conference Paper

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