Effects of rapid thermal annealing on nucleation, growth and properties of lead zirconate titanate films

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 54, Issue 12, 2007, Pages 2548-2554

  Lu, Jian ^a   Zhang, Yi ^a   Ikehara, Tsuyoshi ^a   Mihara, Takashi ^b   Maeda, Ryutaro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OLYMPUS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; GROWTH RATE; HEATING RATE; LEAD COMPOUNDS; NUCLEATION; RAPID THERMAL ANNEALING; SOL-GEL PROCESS; SURFACE MORPHOLOGY;

FILM CRACKS; LEAD ZIRCONATE TITANATE FILMS; PIEZOELECTRIC PROPERTIES; THERMAL ANNEALING;

FILMS;

LEAD; LEAD TITANATE ZIRCONATE; NANOMATERIAL; TITANIUM; UNCLASSIFIED DRUG; ZIRCONIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELASTICITY; EVALUATION; HEAT; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELASTICITY; HEAT; LEAD; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; STRESS, MECHANICAL; SURFACE PROPERTIES; TITANIUM; ZIRCONIUM;

EID: 40649127187     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2007.575     Document Type: Conference Paper

References (27)

1. P. Muralt, "Ferroelectric thin films for micro-sensors and actuators: A review," J. Micromech. Microeng., vol. 10, pp. 136-146, 2000.
2. J. Lu, Y. Zhang, T. Kobayashi, R. Maeda, and T. Mihara, "Preparation and characterization of wafer scale lead zirconate titanium film for MEMS application," Sens. Actuators A, vol. 139, pp. 152-157, 2007.
3. W. Tjhen, T. Tamagawa, C. P. Ye, C. C. Hsueh, P. Schiller, and D. L. Polla, "Properties of piezoelectric thin films for micromechanical devices and systems," in Proc. IEEE MEMS, Nara, Japan, 1991, pp. 114-119.
4. M. A. Dubois and P. Muralt, "Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications," Appl. Phys. Lett., vol. 74, pp. 3032-3034, 1999.
5. T. Kobayashi, J. Tsaur, and R. Maeda, "Fabrication of optical micro scanner driven by PZT actuators," Jpn. J. Appl. Phys., vol. 44, no. 9B, pp. 7078-7082, 2005.
6. Y. B. Jeon, R. Sood, J. H. Jeong, and S. G. Kim, "MEMS power generator with transverse mode thin film PZT," Sens. Actuators A, vol. 122, pp. 16-22, 2005.
7. J. Lu, T. Ikehara, Y. Zhang, R. Maeda, and T. Mihara, "Energy dissipation mechanisms in lead zirconate titanate thin film transduced micro cantilevers," Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8795-8800, 2006.
8. J. Lu, T. Ikehara, T. Kobayashi, R. Maeda, and T. Mihara, "Quality factor of micro cantilevers transduced by piezoelectric lead zirconate titanate film," Microsyst. Technol., vol. 13, no. 11-12, pp. 1517-1522, 2007.
9. C. K. Kwok and S. B. Desu, "Formation kinetics of PZT thin films," J. Mater. Res., vol. 29, pp. 1728-1733, 1994.
10. H. Hu, C. J. Peng, and S. B. Krupanidhi, "Effects of heating rate on the crystallization behavior of amorphous PZT thin films," Thin Solid Films, vol. 223, pp. 327-333, 1993.
11. C. J. Kim, W. J. Lee, and K. No, "Control of preferred orientation in sol-gel lead-zirconate-titanate film on Pt/Ti/glass substrate," Thin Solid Films, vol. 312, pp. 130-134, 1998.
12. 3 thin films by different annealing processes," Thin Solid Films, vol. 500, pp. 138-143, 2006.
13. 3 films fabricated by inducing residual compressive stress during the annealing process," J. Mater. Res., vol. 20, no. 11, pp. 2898-2901, 2005.
14. J. Lu, T. Kobayashi, Y. Zhang, R. Maeda, and T. Mihara, "Wafer scale lead zirconate titanate film preparation by sol-gel method using stress balance layer," Thin Solid Films, vol. 515, no. 4, pp. 1506-1510, 2006.
15. S. Clemens, T. Schneller, R. Waser, A. Rüdiger, F. Peter, S. Kronholz, T. Schmitz, and S. Tiedke, "Integration of ferroelectric lead titanate nanoislands for direct hysteresis measurements," Appl. Phys. Lett., vol. 87, art. no. 142904, 2005.
16. Z. Chen, C. T. Yang, B. Li, M. X. Sun, and B. C. Yang, "Preferred orientation controlling of PZT (52-48) thin films prepared by sol-gel process," J. Cryst. Growth, vol. 285, pp. 627-632, 2005.
17. 3, x = 0.4) thin films," J. Am. Ceram. Soc., vol. 79, no. 2, pp. 495-498, 1996.
18. S. Y. Chen and I. W. Chen, "Texture development, microstructure evolution, and crystallization of chemically derived PZT thin films," J. Am. Ceram. Soc., vol. 81, no. 1, pp. 97-105, 1998.
19. J. M. Marshall, Q. Zhang, Z. Huang, and R. W. Whatmore, "Orientation control of low temperature deposited sol-gel PZT52/48 films," Ferroelectrics, vol. 318, pp. 41-48, 2005.
20. S. Trolier-McKinstry and P. Muralt, "Thin film piezoelectrics for MEMS," J. Electrogram., vol. 12, pp. 7-17, 2004.
21. S. Roy and P. Sarah, "Dielectric properties of chemically synthesized PLZT and PZT: Diffused phase transition and effect of lead non-stoichiometry," J. Phys. D: Appl. Phys., vol. 40, pp. 4668-4673, 2007.
22. T. Zao, X. Dong, H. Yang, C. Mao, and H. Chen, "Enhancement of mechanical and dielectric breakdown properties by diffusion of SiC into lead zirconate titanate ceramics," Scripta Mater., vol. 55, pp. 923-926, 2006.
23. B. Praveenkumar, H. H. Kumar, and D. K. Kharat, "Study on microstructure, piezoelectric and dielectric properties of 3-3 porous PZT composites," J. Mater. Sci.: Mater. Electron., vol. 17, no. 7, pp. 515-518, 2006.
24. J. Lu, Y. Zhang, T. Ikehara, R. Maeda, and T. Mihara, "Effects of rapid thermal annealing on microstructures and properties of PZT-Pt/Ti stacks for MEMS application," in Integrated Ferro-electrics. to be published.
25. R. A. Laletin, A. I. Burkhanov, L. V. Zhoga, A. V. Shil'nikov, A. S. Sigov, and K. A. Vorotilov, "Effect of mechanical stresses on the dielectric response of PZT ferroelectric thin films," Phys. Solid State, vol. 48, pp. 1179-1181, 2006.
26. Z. Song, N. Chong, L. H. W. Chan, C. L. Choy, and C. Lin, "Thermal stability of electrode stacks for application in oxide film devices," Thin Solid Films, vol. 406, pp. 268-274, 2002.
27. 3 thin films fabricated by a sol-gel process," Appl. Phys. Lett., vol. 82, pp. 4540-4542, 2003.