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Volumn 20, Issue 11, 2005, Pages 2898-2901

Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BENDING (DEFORMATION); COMPRESSIVE STRESS; CRACK INITIATION; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; RESIDUAL STRESSES; SILICON; SUBSTRATES; THERMAL EXPANSION; THICK FILMS;

EID: 33645460171     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0383     Document Type: Article
Times cited : (7)

References (12)
  • 1
    • 0030197147 scopus 로고    scopus 로고
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    • D. L. Polla and L.F. Francis: Ferroelectric thin films in microelectromechanical system application. MRS Bull. 21(7), 59 (1996).
    • (1996) MRS Bull. , vol.21 , Issue.7 , pp. 59
    • Polla, D.L.1    Francis, L.F.2
  • 3
    • 0033903421 scopus 로고    scopus 로고
    • Fabrication of PZT thick films on silicon substrates for piezoelectric actuator
    • Y.B. Jeon, J.S. Chung, and K.S. No: Fabrication of PZT thick films on silicon substrates for piezoelectric actuator. J. Electroceram. 4, 195 (2000).
    • (2000) J. Electroceram. , vol.4 , pp. 195
    • Jeon, Y.B.1    Chung, J.S.2    No, K.S.3
  • 5
    • 0034496859 scopus 로고    scopus 로고
    • PZT thin films with preferred-orientation induced by external stress
    • H.X. Oin, J.S. Zhu, and J.Y. Wang: PZT thin films with preferred-orientation induced by external stress. Thin Solid Films 379, 72 (2000).
    • (2000) Thin Solid Films , vol.379 , pp. 72
    • Oin, H.X.1    Zhu, J.S.2    Wang, J.Y.3
  • 7
    • 0001905173 scopus 로고    scopus 로고
    • Effect of external stress on polarization in ferroelectric thin films
    • T. Kumazawa, Y. Kumagai, H. Miura, and M. Kitano: Effect of external stress on polarization in ferroelectric thin films. Appl. Phys. Lett. 72, 608 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 608
    • Kumazawa, T.1    Kumagai, Y.2    Miura, H.3    Kitano, M.4
  • 9
    • 36849104521 scopus 로고
    • Calculated elastic constants for stress problems associated with semiconductor devices
    • W.A. Brantley: Calculated elastic constants for stress problems associated with semiconductor devices. J. Appl. Phys. 44, 534 (1973).
    • (1973) J. Appl. Phys. , vol.44 , pp. 534
    • Brantley, W.A.1
  • 10
    • 79956019250 scopus 로고    scopus 로고
    • A new method for measuring the piezoelectric coefficients of PZT thin films by the strain-monitoring pneumatic loading method (SMPLM)
    • G.T. Park, J.J. Choi, J. Ryu, H. Fan, and H.E. Kim: A new method for measuring the piezoelectric coefficients of PZT thin films by the strain-monitoring pneumatic loading method (SMPLM). Appl. Phys. Lett. 80, 4606 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 4606
    • Park, G.T.1    Choi, J.J.2    Ryu, J.3    Fan, H.4    Kim, H.E.5
  • 11
    • 0001421306 scopus 로고    scopus 로고
    • Origins and evolution of stress development in sol-gel derived thin layers and multideposited coatings of lead titanate
    • S.S. Sengupta, S.M. Park, D.A. Payne, and L.H. Allen: Origins and evolution of stress development in sol-gel derived thin layers and multideposited coatings of lead titanate. J. Appl. Phys. 83, 2291 (1998).
    • (1998) J. Appl. Phys. , vol.83 , pp. 2291
    • Sengupta, S.S.1    Park, S.M.2    Payne, D.A.3    Allen, L.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.