A high rectification ratio nanocrystalline p-n junction diode prepared by metal-induced lateral crystallization for solar cell applications

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Hwang, J D ^a,b   Lee, K S ^a  

^a DA YEH UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIODES; HETEROJUNCTIONS; SILICIDES; SOLAR CELLS;

JUNCTION DIODES; METAL-INDUCED LATERAL CRYSTALLIZATION (MILC); RECTIFICATION RATIO;

NANOCRYSTALLINE MATERIALS;

EID: 40549109642     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2840618     Document Type: Article

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