Dopant effect on in situ doped metal-induced lateral crystallization of amorphous silicon films

Applied Surface Science

Volumn 249, Issue 1-4, 2005, Pages 65-70

  Hwang, Jun Dar ^a   Chang, Jyh Yeu ^a   Wu, Ching Yuan ^a  

^a DA YEH UNIVERSITY   (Taiwan)

Author keywords

MILC; Nickel silicide; PECVD; Polycrystalline silicon

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BORON; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; IN SITU PROCESSING; NICKEL COMPOUNDS; OXIDATION; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION;

MILC; NICKEL-SILICIDE; PECVD; SOLID-PHASE CRYSTALLIZATION;

DOPING (ADDITIVES);

EID: 21244470703     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.11.033     Document Type: Article

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