Nanostructural silicon films prepared by metal-induced growth using an RTCVD system

Journal of the Electrochemical Society

Volumn 152, Issue 1, 2005, Pages

  Hwang, Jun Dar ^a   Lin, Jyh Wei ^a  

^a DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; X RAY DIFFRACTION;

FLOW RATES; NANOSILICON FILMS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); TRANSFORMATION TEMPERATURE;

AMORPHOUS FILMS;

EID: 12744261358     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1827591     Document Type: Article

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