Metal-Induced Lateral Crystallization of a-Si Thin Films by Ni-Co Alloys and the Electrical Properties of Poly-Si TFTs

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 649-651

  Yoon, Yeo Geon ^a   Kim, Min Sun ^a   Kim, Gi Bum ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

Co; Crystallization; Leakage current; MILC; Ni; Poly Si TFT

Indexed keywords

CRYSTALLIZATION; LEAKAGE CURRENTS; NICKEL ALLOYS; THIN FILM TRANSISTORS;

METAL INDUCED LATERAL CRYSTALLIZATION (MILC);

THIN FILMS;

EID: 0141952860     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817610     Document Type: Article

References (9)

1. 2Si-assisted crystallization of amorphous silicon thin films at low temperature," J. Appl. Phys., vol. 85, no. 10, pp. 7180-7184, 1999.
2. H. S. Kim, J. G. Couillard, and D. G. Ast, "Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon," Appl. Phys. Lett., vol. 72, no. 7, pp. 803-805, 1998.
3. S. W. Lee and S.-K. Joo, "Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, pp. 160-162, Apr. 1996.
4. Y. G. Yoon, M. S. Kim, G. B. Kim, and S. K. Joo, "Effect of Co additions on the MILC and the electrical characteristics of MILC poly-Si TFT's," in Proc. Eurodisplay 2002, 2002, pp. 403-405.
5. C. Hayzelden and J. L. Batstone, "Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films," J. Appl. Phys., vol. 73, no. 12, pp. 8279-8289, 1993.
6. 2/Si(111) (M = Co,Ni) interface chemical bond," Phys. Rev. Lett., vol. 60, no. 17, pp. 1743-1746, 1988.
7. M.Man Wong, J.Jhonghe Jin, G. A.Gururaj A. Bhat, P. C.Philip C. Wong, and H. S.Hoi Sing Kwok, "Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors," IEEE Trans. Electron Devices, vol. 47, pp. 1061-1067, May 2000.
8. M.Mingxiang Wang, Z.Zhiguo Meng, and M.Man Wong, "Anisotropic conduction behavior in metal-induced laterally crystallized polycrystalline silicon thin films," Appl. Phys. Lett., vol. 76, no. 4, pp. 448-450, 2000.
9. 2 films on (111)Si," J. Appl. Phys., vol. 84, no. 5, pp. 2583-2590, 1998.