Metal-induced growth of poly-Si on foreign substrates for solar cell applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 154-157

  Guliants, Elena A ^a   Anderson, Wayne A ^a  

^a State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; NICKEL; OHMIC CONTACTS; POLYCRYSTALLINE MATERIALS; SILICON; SOLAR CELLS; SUBSTRATES;

COLUMNAR GROWTH; DEVICE QUALITY; FOREIGN SUBSTRATES; HEATED SUBSTRATES; LATTICE MATCHING; METAL-INDUCED GROWTHS; SOLAR-CELL APPLICATIONS; TECHNOLOGICAL METHODS;

SILICON SOLAR CELLS;

EID: 84949570270     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915777     Document Type: Conference Paper

References (3)

1. NREL report for the U.S. Department of energy "The 2000-2004 National Photovoltaics Program Plan", (01.01.2000).
2. R.S. Wagner and W.C. EIüs, "Vapor-Liquid-Solid Mechanism of Single Crystal Growth," Appl. Phys. Lett. 4, 89 (1964).
3. K. Yoon, "Interfacial Phenomena in Vacuum-Deposited Metal Films on Silicon Substrate," Jpn. J. Appl. Phys, Part 1 21, L779 (1982).