Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Liu, C H ^a   Lam, T K ^b   Ko, T K ^c   Chang, S J ^c   Sun, Y X ^d  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b LEADER UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DISCHARGE; HETEROJUNCTIONS; LEAKAGE CURRENTS; NITRIDES;

BLOCKING LAYERS; CONVENTIONAL HOMOSTRUCTURE;

PHOTODETECTORS;

EID: 40549099776     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2835212     Document Type: Article

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