A suppression of stress-induced voiding in Cu/low-k damascene interconnects using self-aligned metal capping method

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 589-594

  Ashihara, Hiroshi ^a   Ishikawa, Kensuke ^a   Oshima, Takayuki ^a   Sasajima, Katsuhiro ^a   Konishi, Nobuhiro ^a   Uno, Syoichi ^a   Tsugane, Ken ^a   Iwasaki, Tomio ^a   Saito, Tatsuyuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTROMIGRATION; ELECTROPLATING; ETCHING; LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

COPPER DAMASCENE INTERCONNECTS; METAL CAPPING; STRESSMIGRATION (SM); TIME DEPENDENCE DIELECTRIC BREAKDOWN (TDDB);

COPPER;

EID: 4043154331     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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