TDDB improvement in Cu metallization under bias stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 339-343

  Noguchi, Junji ^a   Ohashi, Naofumi ^a   Yasuda, Jun ichi ^a   Jimbo, Tomoko ^a   Yamaguchi, Hizuru ^a   Owada, Nobuo ^a   Takeda, Ken ichi ^a   Hinode, Kenji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; COPPER; COPPER OXIDES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; HYDROGEN BONDS; METALLIZING; PLASMA APPLICATIONS; SILICA; SILICON NITRIDE; SURFACE STRUCTURE;

TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

INTEGRATED CIRCUITS;

EID: 0033732438     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)