Impact of metal deposition process upon reliability of dual-damascene copper interconnects

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 24-26

  Ishikawa, K ^a   Iwasaki, T ^a   Fujii, T ^a   Nakajima, N ^a   Miyauchi, M ^a   Ohshima, T ^a   Noguchi, J ^a   Aoki, H ^a   Saito, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Adhesives; Atherosclerosis; Copper; Electromigration; Integrated circuit interconnections; Scanning electron microscopy; Semiconductor device reliability; Sputtering; Testing; Wire

Indexed keywords

ADHESIVES; COPPER; ELECTROMIGRATION; ELECTRON DEVICE TESTING; INTEGRATED CIRCUIT TESTING; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DEVICES; SPUTTERING; TESTING; WIRE;

ATHEROSCLEROSIS; BIAS SPUTTERING; DUAL DAMASCENE; INTEGRATED CIRCUIT INTERCONNECTIONS; METAL DEPOSITION; SEED FORMATION; SEMICONDUCTOR DEVICE RELIABILITY; STRESS MIGRATION;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944033873     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219701     Document Type: Conference Paper

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