Anodic oxidation-induced delamination of the SUMMiT™poly 0 to silicon nitride interface

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4980, Issue , 2003, Pages 81-86

  Plass, Richard ^a   Walraven, Jeremy A ^a   Tanner, Danelle M ^a   Sexton, Frederick W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Anodic; Delamination; Failure; Mechanism; MEMS; Oxidation

Indexed keywords

ANODIC OXIDATION; DELAMINATION; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; MECHANISMS; POLYSILICON; SILICON NITRIDE; SURFACE TREATMENT;

FAILURE MECHANISMS;

MICROELECTROMECHANICAL DEVICES;

EID: 0038058955     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476366     Document Type: Conference Paper

References (5)

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2. N. Cabrera and N.F. Mott, "Theory of Oxidation of Metals", Rep. of Prog. in Phys. 12, pp. 163-184, 1948.
3. R.B. Comizzoli, "Surface Conductance on Insulators in the Presence of Water Vapors", Proc. of the Fourth Electronic Materials and Processing Congress, Quebec, Canada, August 19-22, pp. 311-316, 1991.
4. R. B. Comizzoli, J. W. Osenbach, G.R. Crane, G. A. Peins, D.J. Sinconolfi, and C.-C. Chang, "Failure Mechanism of Avalanche Photodiodes in the Presence of Water Vapor", J. of Lightwave Tech., 19, pp. 252-265, 2001.
5. P. J. Resnick and P. J. Clews, "Whole Wafer Critical Point Drying of MEMS Devices", Proc. of SPIE, 4558, pp. 189-197, 2001.