Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: A novel analytical model

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2161-2167

  Strollo, A G M ^a   Napoli, E ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Analytical model; Breakdown voltage; ON resistance; Power semiconductor devices; Superjunction devices

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; TWO DIMENSIONAL;

SUPERJUNCTION POWER DEVICES; SUPERJUNCTION STRUCTURES;

MOSFET DEVICES;

EID: 0035444714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944211     Document Type: Article

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