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Volumn 44, Issue 10, 2000, Pages 1753-1764

Analytical model for the 3D-RESURF effect

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EID: 0034291628     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00133-7     Document Type: Article
Times cited : (27)

References (20)
  • 1
    • 62749110128 scopus 로고
    • Optimum doping profile for minimum ohmic resistance and high-breakdown voltage
    • Hu C. Optimum doping profile for minimum ohmic resistance and high-breakdown voltage. IEEE Trans Electron Dev. ED-26:1979;243.
    • (1979) IEEE Trans Electron Dev , vol.26 , pp. 243
    • Hu, C.1
  • 2
    • 0018105862 scopus 로고
    • New type of varactor diode consisting of multi-layer p-n junctions
    • Shirota S., Kaneda S. New type of varactor diode consisting of multi-layer p-n junctions. J Appl Phys. 49(12):1978;6012-6019.
    • (1978) J Appl Phys , vol.49 , Issue.12 , pp. 6012-6019
    • Shirota, S.1    Kaneda, S.2
  • 3
    • 85031537010 scopus 로고    scopus 로고
    • Europe Patent 0053854, 1982
    • Coe DJ. Europe Patent 0053854, 1982.
    • Coe, D.J.1
  • 4
    • 85031540176 scopus 로고    scopus 로고
    • US Patent 4,754,310, 1988
    • Coe DJ. US Patent 4,754,310, 1988.
    • Coe, D.J.1
  • 5
    • 85031554319 scopus 로고    scopus 로고
    • Japan Patent 9701204.1, 1997
    • Fujihira T. Japan Patent 9701204.1, 1997.
    • Fujihira, T.1
  • 6
    • 0032046247 scopus 로고    scopus 로고
    • The 3D RESURF double-gate MOSFET: A revolutionary power device concept
    • Udrea F., Popescu A., Milne W.I. The 3D RESURF double-gate MOSFET: a revolutionary power device concept. IEE Electron Lett. 34(8):1998;808-810.
    • (1998) IEE Electron Lett , vol.34 , Issue.8 , pp. 808-810
    • Udrea, F.1    Popescu, A.2    Milne, W.I.3
  • 7
    • 85031539120 scopus 로고    scopus 로고
    • Japan Patent 98P01676, 1998
    • Udrea F. Japan Patent 98P01676, 1998.
    • Udrea, F.1
  • 8
    • 85031544727 scopus 로고    scopus 로고
    • Europe Patent 99306204.1, 1998
    • Udrea F. Europe Patent 99306204.1, 1998.
    • Udrea, F.1
  • 9
    • 85031555678 scopus 로고    scopus 로고
    • US Patent 5,438,215, 1995
    • Tihanyi J. US Patent 5,438,215, 1995.
    • Tihanyi, J.1
  • 10
    • 85031556253 scopus 로고    scopus 로고
    • US Patent 5,216,275, 1993
    • Chen XB. US Patent 5,216,275, 1993.
    • Chen, X.B.1
  • 11
    • 0001454075 scopus 로고    scopus 로고
    • Drastic reduction of on-resistance with CoolMOS
    • Lorenz L., Marz M., Deboy G. Drastic reduction of on-resistance with CoolMOS. PCIM Europe. 5:1998;250-258.
    • (1998) PCIM Europe , vol.5 , pp. 250-258
    • Lorenz, L.1    Marz, M.2    Deboy, G.3
  • 12
    • 0031633245 scopus 로고    scopus 로고
    • Simulated superior performances of semiconductor superjunction devices
    • Fujihira T, Miyasaka Y. Simulated superior performances of semiconductor superjunction devices. ISPSD 1998:423-6.
    • (1998) ISPSD , pp. 423-426
    • Fujihira, T.1    Miyasaka, Y.2
  • 13
    • 0032295957 scopus 로고    scopus 로고
    • Theory of a novel voltage-sustaining layer for power devices
    • Chen X.B., Mawby P.A., Board K., Salama C.A.T. Theory of a novel voltage-sustaining layer for power devices. Microelectron J. 29:1998;1005-1011.
    • (1998) Microelectron J , vol.29 , pp. 1005-1011
    • Chen, X.B.1    Mawby, P.A.2    Board, K.3    Salama, C.A.T.4
  • 15
    • 0025403853 scopus 로고
    • Optimization of RESURF LDMOS transistors: An analytical approach
    • Parpia Z., Salama C.A.T. Optimization of RESURF LDMOS transistors: an analytical approach. IEEE Trans Electron Dev. 37(3):1990;789-796.
    • (1990) IEEE Trans Electron Dev , vol.37 , Issue.3 , pp. 789-796
    • Parpia, Z.1    Salama, C.A.T.2
  • 19
    • 0001695018 scopus 로고
    • Calculation of avalanche breakdown of silicon p-n junction
    • Fulop W. Calculation of avalanche breakdown of silicon p-n junction. Solid-State Electron. 35:1967;39-43.
    • (1967) Solid-State Electron , vol.35 , pp. 39-43
    • Fulop, W.1
  • 20
    • 0032598941 scopus 로고    scopus 로고
    • Predicted electrical characteristics of 4500 V super multi-resurf MOSFETS
    • Kawaguchi Y, Nakamura K, Nakagawa A. Predicted electrical characteristics of 4500 V super multi-resurf MOSFETS. ISPSD 1999:100-5.
    • (1999) ISPSD , pp. 100-105
    • Kawaguchi, Y.1    Nakamura, K.2    Nakagawa, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.