Defect-less trench filling of epitaxial Si growth by H2 annealing

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 133-136

  Yamauchi, Shoichi ^a   Urakami, Yasushi ^a   Tuji, Nobuhiro ^a   Yamaguchi, Hitoshi ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASPECT RATIO; CRYSTAL DEFECTS; ETCHING; FILLING; HYDROGEN; SILICON; TRENCHING;

TRENCH FILLING;

EPITAXIAL GROWTH;

EID: 0036045273     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)