A novel high-voltage sustaining structure with buried oppositely doped regions

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1280-1285

  Chen, Xing Bi ^a   Wang, Xin ^a   Sin, Johnny K O ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Breakdown voltage; On resistance; Oppositely doped buried regions; Power transistor; VDMOST

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ON RESISTANCE; OPPOSITELY DOPED BURIED REGIONS; POWER TRANSISTOR; VOLTAGE VERTICAL DOUBLE DIFFUSED MOS TRANSISTOR;

MOSFET DEVICES;

EID: 0033749206     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842974     Document Type: Article

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