Germanium nanostructures on silicon observed by scanning probe microscopy

MRS Bulletin

Volumn 29, Issue 7, 2004, Pages

  Tomitori, Masahiko ^a   Arai, Toyoko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

AFM; Atomic force microscopy; Crystal growth; Elemental semiconductors; Germanium; Nanostructures; Scanning probe microscopy; Scanning tunneling microscopy; Silicon; SPM; STM

Indexed keywords

CRYSTAL GROWTH; DEFORMATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; GERMANIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; STRAIN RATE; SURFACE PHENOMENA;

ELEMENTAL SEMICONDUCTORS; HETEROEPITAXIAL GROWTH; SCANNING PROBE MICROSCOPY (SPM); STRAIN ENERGY;

NANOSTRUCTURED MATERIALS;

EID: 4043060706     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2004.143     Document Type: Review

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