Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC

Vacuum

Volumn 81, Issue 5, 2007, Pages 663-668

  Bourenane, K ^a   Keffous, A ^a   Nezzal, G ^b  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

Author keywords

Platinum; Porous silicon carbide; Schottky diode; Silicon carbide

Indexed keywords

CHEMICAL SENSORS; POROUS SILICON; SILICON CARBIDE;

AIR AMBIENT; EXHAUST GAS MONITORING; HYDROCARBURE;

SCHOTTKY BARRIER DIODES;

EID: 33845321978     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.09.009     Document Type: Article

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