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Volumn , Issue , 2007, Pages 240-244

A near-infrared, continuous wavelength, in-lens spectroscopic photon emission microscope system

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED SPECTROSCOPY; MOSFET DEVICES; PHOTONS; WAVELENGTH;

EID: 39749129139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2007.4378092     Document Type: Conference Paper
Times cited : (4)

References (12)
  • 3
    • 0039381741 scopus 로고
    • Spectrum Emitted by Hot Electrons in p-i-n Cold Cathodes
    • De Kort K, Damink P, Boots H, "Spectrum Emitted by Hot Electrons in p-i-n Cold Cathodes", Physical Review B, Vol 48, No 16, pg 11912-11920, 1993.
    • (1993) Physical Review B , vol.48 , Issue.16 , pp. 11912-11920
    • De Kort, K.1    Damink, P.2    Boots, H.3
  • 4
    • 0029712499 scopus 로고    scopus 로고
    • A High-Sensitivity Photon Emission Microscope System with Continuous Wavelength Spectroscopic Capability
    • 29 Apr, 2 May, Dallas, Texas, USA, 96
    • Tao JM, Chim WK, Chan DSH, Phang JCH, Liu YY, "A High-Sensitivity Photon Emission Microscope System with Continuous Wavelength Spectroscopic Capability", Proc 1966 Int Rel Phys Symp (IRPS 1996), 29 Apr - 2 May 96, Dallas, Texas, USA, pg 360-365, 1996.
    • (1996) Proc 1966 Int Rel Phys Symp (IRPS , pp. 360-365
    • Tao, J.M.1    Chim, W.K.2    Chan, D.S.H.3    Phang, J.C.H.4    Liu, Y.Y.5
  • 7
    • 0013227588 scopus 로고
    • Optical Adsorption Measurements of Band-gap Shrinkage in Moderately and Heavily Doped Silicon
    • Aw SE, Tan HS, Ong CK, "Optical Adsorption Measurements of Band-gap Shrinkage in Moderately and Heavily Doped Silicon", J Phys: Condens Matter, Vol 3, No 42, pg 8213-8223, 1991.
    • (1991) J Phys: Condens Matter , vol.3 , Issue.42 , pp. 8213-8223
    • Aw, S.E.1    Tan, H.S.2    Ong, C.K.3
  • 11
    • 21044454076 scopus 로고    scopus 로고
    • Analysis of Near-IR Photon Emissions from 50-nm n- and p-Channel Si MOSFETs
    • de Luna NC, Bailon MF, Tarun AB, "Analysis of Near-IR Photon Emissions from 50-nm n- and p-Channel Si MOSFETs", IEEE Trans Electron Devices, Vol 52, No 6, pg 1211-1214, 2005.
    • (2005) IEEE Trans Electron Devices , vol.52 , Issue.6 , pp. 1211-1214
    • de Luna, N.C.1    Bailon, M.F.2    Tarun, A.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.