Infrared Light Emission from Semiconductor Devices

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 1996-November, Issue , 1996, Pages 9-17

  Barton, D L ^a   Tangyunyong, P ^a   Soden, J M ^a   Liang, A Y ^a,b   Low, F J ^b   Zaplatin, A N ^b   Shivanandan, K ^c   Donohoe, G ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Infrared Laboratories Inc ^*  (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CCD CAMERAS; DEFECTS; EFFICIENCY; GALLIUM ALLOYS; II-VI SEMICONDUCTORS; INDIUM ALLOYS; INFRARED DEVICES; LIQUEFIED GASES; LIQUID NITROGEN; MERCURY AMALGAMS; QUANTUM EFFICIENCY;

DEFECT CLASS; HIGH QUANTUM EFFICIENCY; IMAGING ARRAYS; INFRARED ASTRONOMY; INFRARED LIGHT; NEAR INFRARED CAMERAS; PERFORMANCE; READ NOISE; SLOW SCAN CCD CAMERA; WAVELENGTH RANGES;

SEMICONDUCTOR ALLOYS;

EID: 84866733033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1996p0009     Document Type: Conference Paper

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