Dielectric properties of Ba(SnxTi1-x)O3 thin films grown by a sol-gel process

Journal of the American Ceramic Society

Volumn 87, Issue 12, 2004, Pages 2223-2227

  Zhai, Jiwei ^a   Shen, Bo ^a   Yao, Xi ^a   Zhang, Liangying ^a   Chen, Haydn ^b  

^a TONGJI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SOL-GELS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIELECTRIC LOSS; GRAIN GROWTH RATES; RELAXOR BEHAVIOR; SILICON SUBSTRATES;

BARIUM COMPOUNDS;

EID: 12344265027     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2004.tb07495.x     Document Type: Article

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