Comparative study of drift region designs in RF LDMOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1296-1303

  Cao, Guangjun ^a   Manhas, S K ^a   Narayanan, E M Sankara ^a   De Souza, M M ^a   Hinchley, D ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b AB Mikroelektronik GmbH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HOT CARRIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CAPACITANCE VOLTAGE CHARACTERISTIC; DRIFT REGION DESIGN; HOT CARRIER EFFECT;

MOSFET DEVICES;

EID: 3943082049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832703     Document Type: Article

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