Novel ldmos structure for 2 ghz high power basestation application

1998 28th European Microwave Conference, EuMC 1998

Volumn 1, Issue , 1998, Pages 739-744

  Jos, H F F ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MOS DEVICES; POLYSILICON;

DIFFERENTIAL MODE; FEEDBACK CAPACITANCE; GATE FINGERS; GATE RESISTANCE; LEAD INDUCTANCE; NOVEL STRUCTURES; OUTPUT POWER; POLYSILICON GATES;

BASE STATIONS;

EID: 4444350639     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1998.338079     Document Type: Conference Paper

References (2)

1. H.J.Sigg, G.D.Vendelin, T.P.Cauge, J.Kocsis, D-MOS Transistor for Microwave Applications, EEE Transactions on Electron Devices, Vol. ED-19, 45-53, 1972
2. H.Itoh, T.Okabe, M.Nagata, Extremely high efficient UHF power MOSFET for handy transmitters, Proceedings IEDM, 95-98, 1983