High performance scaled down Si LDMOSFET with thin gate bird's beak technology for RF power amplifiers

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 205-208

  Hoshino, Yutaka ^a   Morikawa, Masatoshi ^a   Kamohara, Shiro ^a   Kawakami, Megumi ^a   Fujioka, Toru ^a   Matsunaga, Yoshikuni ^a   Kusakari, Yuri ^a   Ikeda, Shuji ^a   Yoshida, Isao ^a   Shimizu, Shuichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; EFFICIENCY; ELECTRIC BREAKDOWN; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; FREQUENCIES; GATES (TRANSISTOR); POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

LDMOSFET; ON RESISTANCE; POWER ADDED EFFICIENCY; THIN GATE BIRD BEAK TECHNOLOGY;

MOSFET DEVICES;

EID: 0033347299     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)