High performance silicon LDMOS technology for 2GHz RF power amplifier applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 87-90

  Wood, Alan ^a   Dragon, Chris ^a   Burger, Wayne ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISTORTION; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; POWER AMPLIFIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; EFFICIENCY; SILICON;

DRAIN OPERATING VOLTAGE; INTERMODULATION DISTORTION; POWER GAIN COMPRESSION; POWER TRANSISTOR;

MOSFET DEVICES; MOS DEVICES;

DEVICE PERFORMANCE; DEVICE PROCESSING; DRAIN EFFICIENCY; GAIN COMPRESSION; OPERATING VOLTAGE; PERFORMANCE; POWER GAINS; RF POWER AMPLIFIERS; RF POWER TRANSISTORS; TEST CONDITION;

EID: 0030397063     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)