Effects of annealing on the electrical properties of TiO2 films deposited on Ge-rich SiGe substrates

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Chakraborty, S ^a   Bera, M K ^a   Maiti, C K ^a   Bose, P K ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THIN FILMS;

GE-RICH SIGE SUBSTRATES; SCHOTTKY EMISSION; TIO2 FILMS;

TITANIUM DIOXIDE;

EID: 33746813524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218031     Document Type: Article

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