Numerical analysis of ultrasonic wire bonding: Part 2. Effects of bonding parameters on temperature rise

Microelectronics Reliability

Volumn 48, Issue 1, 2008, Pages 149-157

  Ding, Yong ^a,b   Kim, Jang Kyo ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b NINGBO UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; NUMERICAL METHODS; PARAMETER ESTIMATION; THREE DIMENSIONAL; ULTRASONIC WAVES;

MAXIMUM BULK TEMPERATURE; ULTRASONIC VIBRATION; ULTRASONIC WIRE BONDING;

BONDING;

EID: 39149128796     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.083     Document Type: Article

References (33)

1. Harman G.G. Wire bonding in microelectronics (1997), McGraw-Hill, New York
2. Schneuwly A., Groning P., Schlapbach L., and Muller G. Bondability analysis of bond pads by thermoelectric temperature measurements. J Electron Mater 27 (1998) 1254-1261
3. Hamidi A., Beck N., Thomas K., and Herr E. Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules. Microelectron Reliab 39 (1999) 1153-1158
4. Kim J.K., and Au B.P.L. Effects of metallisation surface characteristics on gold wire bondability of organic printed circuit boards. J Electron Mater 30 (2001) 1001-1011
5. Chan Y.H., Kim J.K., Liu D.M., Liu P.C.K., Cheung Y.M., and Ng M.W. Process windows for low temperature Au wire bonding. J Electron Mater 33 (2004) 146-155
6. Chan Y.H., Kim J.K., Liu D.M., Liu P.C.K., Cheung Y.M., and Ng M.W. Improvement of wire bond process window via plasma treatment. IEEE Trans CPMT Part A: Adv Packag 28 (2005) 674-684
7. Krzanowski J.E., and Murdeshwar N. Deformation and bonding processes in aluminum ultrasonic wire wedge bonding. J Electron Mater 19 (1990) 919-928
8. Hu S.J., Lim G.E., and Foong K.P. Study of temperature parameter on the thermosonic gold wire bonding of high-speed CMOS. IEEE Trans CHMT 14 (1991) 855-858
9. Jeng Y.R., Aoh J.H., and Wang C.M. Thermosonic wire bonding of gold wire onto copper pad using the saturated interfacial phenomena. J Phys D: Appl Phys 34 (2001) 3515-3521
10. Harman G.G., and Albers J. The ultrasonic welding mechanism as applied to aluminium- and gold-wire bonding in microelectronics. IEEE Trans PHP 13 (1977) 406-412
11. Joshi K.C. The formation of ultrasonic wire bonding between metals. Weld J 50 (1971) 840-858
12. Harman GG, Leedy KO. An experimental model of the microelectronics ultrasonic bonding mechanisms, 10th Annu Proc Reliab Phys Symp 1972. p. 49-56.
13. Jeng Y.R., and Hong J.H. A microcontact approach for ultrasonic bonding in microelectronics. J Tribol 123 (2001) 3515-3521
14. Ashby M.F., Abulawi J., and Kong H.S. Temperature maps for frictional heating in dry sliding. Tribol Trans 34 (1991) 577-587
15. Blau P.J. Friction science and technology (1996), Marcel Dekker Inc., NY
16. Bhushan B. Introduction to Tribology (2002), Wiley & Sons, Inc., NY
17. Mayer M., Paul O., Bolliger D., and Baltes H. Integrated temperature microsensors for characterization and optimization of thermosonic ball bonding process. IEEE Trans Comp Packag Manufact Technol Part A: Packag Technol 23 (2000) 393-398
18. Osorio R., Mayer M., Schwizer J., Korvink J.G., and Baltes H. Simulation procedure to improve piezoresistive microsensors used for monitoring ball bonding. Sensor Actuat A-Phys 92 (2001) 299-304
19. Suman S., Gaitan M., Joshi Y., and Harman G.G. Wire-bonding process monitoring using thermopile temperature sensor. IEEE Trans Adv Packag 28 (2005) 685-693
20. Kalin M., and Vizintin J. Comparison of different theoretical models for flash temperature calculation under fretting conditions. Tribol Int 34 (2001) 831-839
21. McGee T.D. Principles and methods of temperature measurement (1998), Wiley & Sons, Inc., NY
22. Tsujino J., Yoshihara H., Kamimoto K., and Osada Y. Welding characteristics and temperature rise of high frequency and complex vibration ultrasonic wire bonding. Ultrasonics 36 (1998) 59-65
23. Ding Y., Kim J.K., and Tong P. Effects of bonding force on contact pressure and frictional energy in wire bonding. Microelectron Reliab 46 (2006) 1101-1112
24. ASM Handbook. Materials Park, OH: ASM International; 1990.
25. Shackelford J.F., and Alexander W. CRC Materials science and engineering handbook (2001), CRC Press, Boca Raton (FL)
26. Ikeda T., Miyazaki N., Kudo K., Arita K., and Yakiyama H. Failure estimation of semiconductor chip during wire bonding process. J Electron Packag 121 (1999) 85-91
27. Takahashi Y., and Inoue M. Numerical study of wire bonding-analysis of interfacial deformation between wire and pad. J Electron Packag 124 (2002) 27-36
28. Mayer M, Schwizer J. Ultrasonic bonding: understanding how process parameters determine the strength of Au-Al bonds. In: Proc Intl Symp Microelectronics, IMAPS, Denver, CO, USA, 2002. p. 626-31.
29. Mills A.F. Heat transfer (1999), Prentice-Hall, Upper Saddler River (NJ)
30. Cengel Y.A. Heat transfer: a practical approach (2003), McGraw-Hill, Boston
31. Holman J.P. Heat transfer (2002), McGraw-Hill, NY
32. Bathe K.J. Finite element procedures (1996), Prentice-Hall Inc., Englewood Cliffs (NJ)
33. Sheaffer M., and Levine L. How to optimize and control the wire bonding process: Part II. Solid State Technol 34 (1991) 54-62