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Volumn 121, Issue 2, 1999, Pages 85-91

Failure estimation of semiconductor chip during wire bonding process

Author keywords

[No Author keywords available]

Indexed keywords

ELASTOPLASTICITY; FAILURE ANALYSIS; MICROPROCESSOR CHIPS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; STRESS CONCENTRATION; VIBRATIONS (MECHANICAL);

EID: 0032633863     PISSN: 10437398     EISSN: 15289044     Source Type: Journal    
DOI: 10.1115/1.2792672     Document Type: Article
Times cited : (32)

References (8)
  • 1
    • 36849104521 scopus 로고
    • Calculated Elastic Constants for Stress Problem Associated with Semiconductor Devices
    • Brantley, W. A., 1973, “Calculated Elastic Constants for Stress Problem Associated with Semiconductor Devices,” Journal of Applied Physics, Vol. 44, pp. 534-535.
    • (1973) Journal of Applied Physics , vol.44 , pp. 534-535
    • Brantley, W.A.1
  • 3
    • 0020125604 scopus 로고
    • Critical Stress in Silicon Brittle Fracture, and Effect of Ion Implantation and Other Surface Treatment
    • Hu, S. M 1982, “Critical Stress in Silicon Brittle Fracture, and Effect of Ion Implantation and Other Surface Treatment," Journal of Applied Physics, Vol. 53, pp. 3576-3580.
    • (1982) Journal of Applied Physics , vol.53 , pp. 3576-3580
    • Hu, S.M.1
  • 4
    • 85025236805 scopus 로고
    • EMIS Datareviews, Series, IEE, London
    • INSPEC, 1988, “Properties of Silicon,” EMIS Datareviews, Series No. 4, IEE, London, pp. 14-16.
    • (1988) Properties of Silicon , vol.4 , pp. 14-16
  • 5
    • 2342483258 scopus 로고
    • An Evaluation of the Thermal and Elastic Constants Affecting GaAs Crystal Growth
    • Jordan, A. S., 1980, “An Evaluation of the Thermal and Elastic Constants Affecting GaAs Crystal Growth,” Journal of Crystal Growth, Vol. 49, pp. 631-642.
    • (1980) Journal of Crystal Growth , vol.49 , pp. 631-642
    • Jordan, A.S.1
  • 6
    • 0002842613 scopus 로고
    • The Brittle-Ductile Transition in Silicon. I. Experiments
    • Samuels, J., and Robert, S. G 1989, “The Brittle-Ductile Transition in Silicon. I. Experiments,” Proceedings of the Royal Society of London, Vol. A421, pp. 1-23.
    • (1989) Proceedings of the Royal Society of London , vol.A421 , pp. 1-23
    • Samuels, J.1    Robert, S.G.2
  • 7
    • 0024666591 scopus 로고
    • The Brittle-Ductile Transition in Silicon: The Influence of Pre-Existing Dislocation Arrangements
    • Warren, P. D., 1989, “The Brittle-Ductile Transition in Silicon: The Influence of Pre-Existing Dislocation Arrangements,” Scripta Metallugica, Vol. 23, pp. 637-642.
    • (1989) Scripta Metallugica , vol.23 , pp. 637-642
    • Warren, P.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.