Simulation procedure to improve piezoresistive microsensors used for monitoring ball bonding

Sensors and Actuators, A: Physical

Volumn 92, Issue 1-3, 2001, Pages 299-304

  Osorio, R ^a   Mayer, M ^b   Schwizer, J ^b   Korvink, J G ^a   Baltes, H ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b ETH ZURICH   (Switzerland)

Author keywords

Ball bonding; CMOS piezoresistors; Parameter extraction; Rigorous simulation

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; FINITE DIFFERENCE METHOD; INTEGRATED CIRCUIT MANUFACTURE; STRESSES; TENSORS; TWO DIMENSIONAL; ULTRASONIC EFFECTS;

BALL BONDING; CONDUCTIVITY TENSOR; INTEGRATED PIEZORESISTIVE MICROSENSOR; ULTRASOUND STRESS;

MICROSENSORS;

EID: 0035426148     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00587-8     Document Type: Article

References (3)

1. In-situ ultrasonic stress measurements during ball bonding using integrated piezoresistive microsensors
2. Microelectronic bonding process monitoring by integrated sensors
3. Simulation I class notes