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Volumn 92, Issue 4, 2008, Pages

Energy-band alignment of Hf O2 Si O2 SiC gate dielectric stack

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; GATE DIELECTRICS; LEAKAGE CURRENTS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND ALIGNMENT; GATE DIELECTRIC STACK; SCHOTTKY EMISSION; STACK LAYERS;

BAND STRUCTURE;

EID: 38849208643 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2839314 Document Type: Article

Times cited : (42)

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