Profiling of the SiO2-SiC interface using x-ray photoelectron spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Ghosh, R N ^a   Ezhilvalavan, S ^a   Golding, B ^a   Mukhopadhyay, S M ^a   Mahadev, N ^a   Joshi, P ^a   Das, M K ^a   Cooper J A , Jr ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; HIGH TEMPERATURE APPLICATIONS; SILICA; SILICON CARBIDE; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

PROFILING; SILICA-SILICON CARBIDE INTERFACE;

INTERFACES (MATERIALS);

EID: 0034869664     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Atomistic mechanisms of oxygen precipitation and thin - Film oxidation of SiC
2. Intrinsic SiC/SiO2 interface states
3. 2 - SiC interface
4. High-carbon concentrations at the silicon dioxide - Silicon carbide interface identified by electron energy loss spectroscopy
5. Effect of oxidation and reoxidation on the oxide - Substrate interface of 4H- and 6H-SiC
6. Microscopic structure of the SiO2/Si interface
7. Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface
8. Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)