Temperature dependence of structural and optical properties of ZnO films grown on Si substrates by MOCVD

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 314-318

  Liu, C Y ^a,b   Zhang, B P ^a,c   Binh, N T ^a   Wakatsuki, K ^a,c   Segawa, Y ^a,c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TONGHUA TEACHERS COLLEGE   (China)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Deposition temperature; A1. Multilayer tower structure; A3. Metal organic chemical vapor deposition (MOCVD)

Indexed keywords

CRYSTALLIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; OPTICAL PROPERTIES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DEPOSITION TEMPERATURE; MULTILAYER TOWER STRUCTURE; ULTRAVIOLET (UV) BAND EDGE EMISSIONS;

THIN FILMS;

EID: 33646352242     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.071     Document Type: Article

References (22)

1. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., and Goto T. Appl. Phys. Lett. 70 (1997) 2230
2. Weisbuch C., Benisty H., and Houdré R.J. J. Luminescence 85 (2000) 271
3. Yu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Solid State Commun. 103 (1997) 456
4. Haase M.A., Qiu J., De Puydt J.M., and Cheng H. Appl. Phys. Lett. 59 (1991) 1272
5. Jain S.C., Willander M., Narayan J., and Van Overstraeten R. J. Appl. Phys. 87 (2000) 965
6. Cao H., Zhao Y.G., Ong H.C., Ho S.T., Dai J.Y., Wu J.Y., and Chang R.P.H. Appl. Phys. Lett. 73 (1998) 3656
7. Thareja R.K., and Mitra A. Appl. Phys. B 71 (2000) 181
8. Yu S.F., Yuen C., Lau S.P., Wang Y.G., Lee H.W., and Tay B.K. Appl. Phys. Lett. 83 (2003) 4288
9. Zhang B.P., Binh N.T., Usami N., and Segawa Y. Thin Solid Films 449 (2004) 12
10. Srupanidihi S.B., and Sayer M. J. Appl. Phys. 56 (1984) 3308
11. Liu Y.X., Liu Y.C., Shen D.Z., Zhong G.Z., Fan X.W., Kong X.G., Mu R., and Henderson D.O. J. Crystal Growth 240 (2002) 152
12. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
13. Zhang B.P., Binh N.T., Wakatsuki K., Usami N., and Segawa Y. Appl. Phys. A 79 (2004) 1711
14. Ng H.T., Li J., Smith M.K., Nguyen P., Cassell A., Han J., and Meyyappan M. Science 300 (2003) 1240
15. Vispute R.D., Talyansky V., Choopun S., Sharma R.P., Venkatesan T., He M., Tang X., Halpern J.B., Spencer M.G., Li Y.X., and Jones K.A. Appl. Phys. Lett. 73 (1998) 348
16. Nanto H., Minami T., and Takata S. Phys. Status Solidi A 65 (1981) k131
17. Myong S.Y., Baik S.J., Lee C.H., Cho W.Y., and Lim K.S. Jpn. J. Appl. Phys. 36 (1997) L1087
18. Segawa Y., Ohtomo A., Kawasaki M., Koinuma H., Tang Z.K., Yu P., and Wong G.K.L. Phys. Status Solidi (B) 202 (1997) 669
19. Iwata K., Fons P., Niki S., Yamada A., Matsubara K., Nakahara K., Tanabe T., and Takasu H. J. Crystal Growth 193 (1998) 316
20. Chen Y., Ko H.J., Hong S.K., and Yao T. Appl. Phys. Lett. 76 (2000) 559
21. Ko K.H., Chen Y., Hong S.K., and Yao T. J. Crystal Growth 209 (2000) 816
22. Tamura K., Ohtomo A., Saikuma K., Osaka Y., Makino T., Segawa Y., Sumiya M., Fuke S., Koinuma H., and Kawasaki M. J. Crystal Growth 214/215 (2000) 59