Growth and photoluminescence of ZnO thin films on Si(1 1 1) by PLD in oxygen adequate ambient

Vacuum

Volumn 81, Issue 9, 2007, Pages 1035-1039

  Zhao, Jie ^a,b   Hu, Lizhong ^a   Wang, Zhaoyang ^a   Chen, Jianming ^b   Zhao, Jianjun ^b   Fan, Zebin ^b   Wu, Guangmin ^b  

^a State Key Laboratory for Materials Modification by Laser   (China)

^b KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Photoluminescence; Pulsed laser deposition; Reflection high energy electron diffraction; X ray diffraction; ZnO

Indexed keywords

FILM GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; REFLECTION; X RAY DIFFRACTION; ZINC OXIDE;

DONOR-ACCEPTOR-PAIR (DAP) TRANSITION; HIGH-ENERGY ELECTRON DIFFRACTION; INTENSITY RATIO; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 34248220038     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.12.008     Document Type: Article

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