Effect of ZnO buffer layer prepared by rf sputtering on heteroepitaxial growth of high-quality ZnO films

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 601-605

  Sato, D ^a   Kashiwaba, Y ^a   Haga, K ^a   Watanabe, H ^a   Zhang, B P ^b   Segawa, Y ^b  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Buffer layer; MO CVD; Rotation domains; Sapphire; Sputtering; ZnO

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; SPUTTERING; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; NEUTRAL DONORS; ROTATION DOMAINS; ZNO;

ZINC OXIDE;

EID: 2442536713     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.063     Document Type: Article

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