Trade-off between reliability and post-CMP defects during recrystallization anneal for copper damascene interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 350-354

  Alers, G B ^a   Dornisch, D ^b   Siri, J ^a   Kattige, K ^a   Tam, L ^a   Broadbent, E ^a   Ray, G W ^a  

^a Novellus Systems   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTROMIGRATION; GRAIN GROWTH; GRAIN SIZE AND SHAPE; METALLIC FILMS; MICROSCOPIC EXAMINATION; RAPID THERMAL ANNEALING; RELIABILITY; TEXTURES; THERMAL EXPANSION;

COPPER DAMASCENE INTERCONNECTS; ELECTROPLATED COPPER FILM; FOCUSED ION BEAM; ORIENTATION IMAGING MICROSCOPY;

COPPER;

EID: 0034995156     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2001.922926     Document Type: Article

References (5)