Characterization of copper voids in dual damascene processes

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2002, Pages 351-355

  Guldi, Richard L ^a   Shaw, Judy B ^a   Ritchison, Jeffrey ^a   Oestreich, Steve ^b   Davis, Kara ^b   Fiordalice, Robert ^b  

^a TEXAS INSTRUMENTS   (United States)

^b KLA Tencor Austin   (United States)

Author keywords

Copper defectivity; Copper inspection; Damascene; Defect source partitioning; E beam inspection

Indexed keywords

COPPER; ELECTRON BEAMS; INSPECTION; PROCESS CONTROL;

COPPER VOIDS; DUAL DAMASCENE PROCESSES;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0036075618     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2002.1001632     Document Type: Article

References (3)

1. Post-ECP annealing for advanced copper interconnect application
2. Chemically induced defects during copper polish
3. Understanding and eliminating one of the most important types of defects in electroplated Cu films